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Ultra-clean Si/Si interface formation by surface preparation and direct bonding in ultra-high vacuum

Karin Hermansson ; Francois Grey ; Stefan Bengtsson (Institutionen för fasta tillståndets elektronik) ; Ulf Södervall (Institutionen för fysik)
Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications p. 401. (1998)
[Konferensbidrag, refereegranskat]

Silicon surfaces have been cleaned and bonded in ultra-high vacuum at a pressure in the 10-10 torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface spreading resistance and current vs. temperature measurements. This suggests that the barrier is caused by inevitable dislocation networks due to wafer misorientation, as well as residual oxygen at the interface

Nyckelord: dislocations, electric current, electric resistance, elemental semiconductors, interface structure, mass spectroscopic chemical analysis, secondary ion mass spectra, silicon, surface cleaning, surface contamination, vacuum techniques, wafer bonding

Denna post skapades 2006-09-19. Senast ändrad 2015-02-11.
CPL Pubid: 17781


Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)
Institutionen för fysik (1900-2003)



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