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Bonded Al2O3-covered Si-wafers for highly thermally conductive SOI-materials

Per Ericsson (Institutionen för fasta tillståndets elektronik) ; Stefan Bengtsson (Institutionen för fasta tillståndets elektronik) ; Jarmo Skarp ; T. Kanniainen
Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications p. 576. (1998)
[Konferensbidrag, refereegranskat]

Aluminum oxide films deposited by low temperature atomic layer epitaxy were studied as an alternative to the commonly used silicon dioxide buried insulator of bonded silicon on insulator wafers. Successful room temperature bonding was performed between bare hydrophilic silicon wafers and silicon wafers covered with aluminum oxide. The surface energy after room temperature bonding was 50 mJ/m2, and after an anneal at 330°C, it had increased to 600 mJ/m2. After annealing at 500°C, the silicon wafers fractured upon insertion of a 50 μm blade. Higher temperatures than 500°C resulted in wafer separation, probably due to film densification and associated tensile stress. Leakage currents through the aluminum oxide films and breakdown electric fields were satisfactory for the intended application after a post-deposition anneal

Nyckelord: aluminium compounds, annealing, atomic layer epitaxial growth, buried layers, densification, dielectric thin films, electric breakdown, fracture, internal stresses, leakage currents, silicon-on-insulator, surface energy, thermal conductivity, wafer bonding



Denna post skapades 2006-09-19. Senast ändrad 2015-02-11.
CPL Pubid: 17780

 

Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)

Ämnesområden

Elektronik

Chalmers infrastruktur