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Effects of different prebonding cleaning procedures on the buried oxides of bond-and-etchback silicon-on-insulator materials

Per Ericsson (Institutionen för fasta tillståndets elektronik) ; Stefan Bengtsson (Institutionen för fasta tillståndets elektronik)
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications p. 115. (1995)
[Konferensbidrag, refereegranskat]

Chemical element distributions and electrical properties of metal-oxide-semiconductor devices made of bond-and-etchback silicon-on-insulator materials were investigated. The buried oxide functioned as the gate dielectric for the metal-oxide-semiconductor devices. Three groups of devices with different bonded interface locations and prebonding cleaning procedures were made. Secondary ion mass spectroscopy revealed that bonded oxides cleaned using an RCA clean before contacting had a higher concentration of hydrogen at the bonded interface compared to devices rinsed in deionized water only. The RCA cleaned devices were also more sensitive to bias-temperature stress and charge injection by internal photoemission. Finally, partial etchback of the bonded oxides of RCA cleaned devices made the top oxide crack at several locations

Nyckelord: buried layers, cracks, dielectric thin films, etching, interface structure, internal stresses, MOS capacitors, photoemission, secondary ion mass spectroscopy, silicon-on-insulator, surface cleaning, thermal stresses, wafer bonding



Denna post skapades 2006-09-19. Senast ändrad 2015-02-11.
CPL Pubid: 17778

 

Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)

Ämnesområden

Elektronik

Chalmers infrastruktur