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Electrical characterization of bonding interfaces

Olof Engström (Institutionen för fasta tillståndets elektronik) ; Stefan Bengtsson (Institutionen för fasta tillståndets elektronik)
Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications p. 295. (1992)
[Konferensbidrag, refereegranskat]

An overview is given on measurement techniques and results obtained for the characterization of bonded Si-Si, Si-SiO2 and SiO2-SiO2 interfaces. The electrical properties of Si-Si interfaces are found to be very similar to those of grain boundaries, which suggests a model where the current across the interface is limited by a potential barrier determined by charge carriers captures into electron states at the bonded interface. From current-voltage and capacitance-voltage measurements, the interface charge and its energy distribution can be determined. For bonded Si-SiO2 interfaces, energy states distributions are obtained by capacitance voltage technique with midgap densities in the region at or above 5 1010 eV-1 cm-2. Interfaces between two bonded SiO2 layers exhibit an increased concentration of electron traps

Nyckelord: adhesion, electron traps, electronic density of states, elemental semiconductors, interface electron states, metal-insulator-semiconductor structures, semiconductor junctions, semiconductor-insulator boundaries, silicon, silicon compounds, wafer bonding

Denna post skapades 2006-09-19. Senast ändrad 2015-02-11.
CPL Pubid: 17777


Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)



Chalmers infrastruktur