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The influence of surface micro-roughness on bondability

Mats Bergh (Institutionen för fasta tillståndets elektronik) ; Stefan Bengtsson (Institutionen för fasta tillståndets elektronik) ; Mats O. Andersson (Institutionen för fasta tillståndets elektronik)
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications p. 126. (1995)
[Konferensbidrag, refereegranskat]

The requirements on a surface in terms of micro-roughness necessary to achieve spontaneous bonding on wafer contact have been investigated. Wafers from four different manufacturers, all having their special surface characteristics, were evaluated using atomic force microscopy. Their room temperature bondability was investigated using the contact wave velocity and the surface energy of the formed bond as parameters. Different wet cleaning procedures were used to modify the micro-roughness of the silicon surface. It is found that the surface rms roughness value is not a good measure for judging the bondability of a surface. Instead we propose the use of the Fourier spectrum of the surface roughness. The occurrence of low, ~0.001 Å-1, spatial frequency components of large amplitude in the Fourier spectrum of the surface roughness may affect the bondability of the surface negatively while higher frequency components are not as important

Nyckelord: atomic force microscopy, Fourier transforms, surface cleaning, surface energy, surface topography, wafer bonding

surface micro-roughness spontaneous bonding wafer atomic force microscopy room temperature bondability contact wave velocity surface energy wet cleaning procedure surface rms roughness value Fourier spectrum spatial frequency components Si

Denna post skapades 2006-09-19. Senast ändrad 2015-02-11.
CPL Pubid: 17776


Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)



Chalmers infrastruktur