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Charge densities at silicon interfaces prepared by wafer bonding

Stefan Bengtsson (Institutionen för fasta tillståndets elektronik) ; Olof Engström (Institutionen för fasta tillståndets elektronik)
1990 IEEE SOS/SOI Technology Conference. p. 77. (1990)
[Artikel, refereegranskad vetenskaplig]

It is found that Si/Si and Si/SiO2 interfaces exhibit different interface charge properties when bonded at comparable temperatures and surface treatments. Thermally grown oxides were bonded to bare silicon surfaces and the bonded Si/SiO2 interface was investigated on MOS-structures by the C-V technique. Interfaces prepared at temperatures in the range 900-1100°c exhibited U-shaped interface state densities. Si/Si samples were prepared using a hydrophilizing surface treatment before wafer bonding. At the same annealing temperatures, the interface state densities of the bonded Si/Si interfaces were in the range 1011-1013 cm-2 eV-1. Si/Si interfaces are found to be very sensitive to prebond chemical treatment, while Si/SiO2 interfaces are not. Native oxides at bonded silicon interfaces have a more pronounced influence on Si/Si interfaces than on Si/SiO2 interfaces

Nyckelord: elemental semiconductors, interface electron states, semiconductor junctions, semiconductor technology, semiconductor-insulator boundaries, silicon, surface treatment

Denna post skapades 2006-09-19. Senast ändrad 2015-02-11.
CPL Pubid: 17772


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Institutionen för fasta tillståndets elektronik (1985-1998)



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