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Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces

Stefan Bengtsson (Institutionen för fasta tillståndets elektronik) ; Olof Engström (Institutionen för fasta tillståndets elektronik)
ESSDERC 90. 20th European Solid State Device Research Conference p. 1. (1990)
[Konferensbidrag, refereegranskat]

Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage

Nyckelord: bonds (chemical), elemental semiconductors, interface electron states, semiconductor junctions, silicon



Denna post skapades 2006-09-19. Senast ändrad 2015-02-11.
CPL Pubid: 17771

 

Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)

Ämnesområden

Elektronik

Chalmers infrastruktur