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Silicon on aluminum nitride structures formed by wafer bonding

Stefan Bengtsson (Institutionen för fasta tillståndets elektronik) ; Manolis Choumas (Institutionen för fasta tillståndets elektronik) ; W. P. Maszara ; Mats Bergh (Institutionen för fasta tillståndets elektronik) ; C. Olesen ; Ulf Södervall (Institutionen för fysik) ; A. Litwin
1994 IEEE International SOI Conference Proceedings p. 35. (1994)
[Artikel, refereegranskad vetenskaplig]

This paper deals with the use of reactively sputtered aluminum nitride (AlN) films as insulators for Bond and Etch-back Silicon-On-Insulator (BESOI) materials. In SOI-applications where high power is dissipated in the silicon SOI-film the low thermal conductivity of the buried silicon dioxide layer may cause a temperature rise in the silicon film detrimentally affecting the device performance. An attractive alternative would be to replace the silicon dioxide of the SOI structure with another material, like diamond, silicon carbide or aluminum nitride. The thermal conductivity of AlN is considerably larger than that of Si02. This paper presents results on how sputter deposition of AlN may be combined with wafer bonding for the creation of highly thermally conductive SOI structures

Nyckelord: aluminium compounds, elemental semiconductors, silicon, silicon-on-insulator, sputter deposition, wafer bonding

Denna post skapades 2006-09-19. Senast ändrad 2015-02-11.
CPL Pubid: 17769


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Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)
Institutionen för fysik (1900-2003)



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