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Characterization of thin SOI layers

Stefan Bengtsson (Institutionen för fasta tillståndets elektronik)
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications p. 221. (1995)
[Konferensbidrag, refereegranskat]

Silicon-on-insulator materials still suffer from imperfect electrical and crystalline quality and a spread in performance is observed. Viable characterization techniques are necessary to advance the quality of the materials. This paper gives an overview of characterization methods for silicon-on-insulator materials. Different techniques, both destructive and nondestructive, for determination of silicon and silicon dioxide film thicknesses, structural defects and impurities are reviewed. The potentials and limits of different techniques for silicon-on-insulator material characterization are discussed and some examples of results are given primarily for silicon-on-insulator materials formed by wafer bonding

Nyckelord: crystal defects, impurity distribution, inspection, integrated circuit technology, materials testing, quality control, silicon-on-insulator, wafer bonding

Denna post skapades 2006-09-19. Senast ändrad 2015-02-11.
CPL Pubid: 17767


Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)



Chalmers infrastruktur