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Analysis of electron capture at oxide traps by electric field injection

Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Naser Sedghi ; Ivona Z. Mitrovic ; Stephen Hall
Applied Physics Letters (0003-6951). Vol. 102 (2013), 21,
[Artikel, refereegranskad vetenskaplig]

Electron injection into oxide traps of metal/high-k oxide/interlayer/silicon structures is investigated by modeling. We demonstrate the influence on flat-band voltage by the sharpness of the interlayer/silicon interface and by the properties of traps in the oxide. Since charge carrier injection in this kind of structures may take place by two different processes simultaneously, excluding one or the other in the interpretation of data may lead to considerable erroneous results in extracted values of capture cross sections.

Article number: 211604

Denna post skapades 2013-05-29. Senast ändrad 2016-05-19.
CPL Pubid: 177656


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