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Graphene-Si Schottky IR Detector

Mina Amirmazlaghani ; Farshid Raissi ; Omid Habibpour (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Josip Vukusic (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
IEEE Journal of Quantum Electronics (0018-9197). Vol. 49 (2013), 7, p. 589-594.
[Artikel, refereegranskad vetenskaplig]

This paper reports on photodetection properties of graphene-Si schottky junction by measuring current-voltage characteristics under 1.55µm excitation laser. The measurements have been done on a junction fabricated by depositing mechanically exfoliated natural graphite on top of the pre-patterned silicon substrate. The electrical Schottky barrier height is estimated to be (0.44-0.47) eV with a minimum responsivity of 2.8mA/W corresponding to an internal quantum efficiency of 10% which is almost an order of magnitude larger than regular Schottky junctions. A possible explanation for the large quantum efficiency related to the 2-D nature of graphene is discussed. Large quantum efficiency, room temperature IR detection, ease of fabrication along with compatibility with Si devices can open a doorway for novel graphene-based photodetectors.

Nyckelord: Detector, Graphene, Schottky diode, Si



Denna post skapades 2013-05-08. Senast ändrad 2017-01-27.
CPL Pubid: 176713

 

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