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Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence

Xiren Chen ; Yuxin Song (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Liang Zhu ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Wei Lu ; Shaoling Guo ; Jun Shao
Journal of Applied Physics (0021-8979). Vol. 113 (2013), 15, p. 153505-153507.
[Artikel, refereegranskad vetenskaplig]

Photoluminescence (PL) measurements are performed on one GaSb/AlGaSb single-quantum-well (SQW) sample and two dilute-bismuth (Bi) GaSb/AlGaSb SQW samples grown at 360 and 380 °C, at low temperatures and under magnetic fields. Bimodal PL features are identified in the dilute-Bi samples, and to be accompanied by abnormal PL blueshift in the sample grown at 360 °C. The bimodal PL features are found to be from similar origins of band-to-band transition by magneto-PL evolution. Analysis indicates that the phenomenon can be well interpreted by the joint effect of interfacial large-lateral-scale islands and Al/Ga interdiffusion due to Bi incorporation. The interdiffusion introduces about 1-monolayer shrinkage to the effective quantum-well thickness, which is similar to the interfacial islands height, and the both together result in an unusual shallow-terrace-like interface between GaSbBi and AlGaSb. A phenomenological model is established, the Bi content of isoelectronic incorporation and the exciton reduced effective mass are estimated for the GaSbBi sample grown at 380 °C, and a value of about 21 meV/% is suggested for the bandgap bowing rate of GaSbBi. An effective routine is suggested for determining the Bi content and the depth of the shallow-terraces at interface in dilute-Bi SQW structures.

Nyckelord: dilute bismide, GaSbBi, quantum well, MBE, photoluminescence, interface

Denna post skapades 2013-04-16. Senast ändrad 2015-04-09.
CPL Pubid: 175735


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