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Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

Yi Gu ; Yonggang Zhang ; Yuxin Song (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Hong Ye (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Yuanying Cao ; Aizhen Li ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Chinese Physics B (1674-1056). Vol. 22 (2013), 3, p. 037802.
[Artikel, refereegranskad vetenskaplig]

The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.

Nyckelord: dilute bismide, GaAsBi, quantum well, MBE, telecom, 1.3 mum

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Denna post skapades 2013-04-09. Senast ändrad 2013-05-02.
CPL Pubid: 175568


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