CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

Broadband Gm-boosted differential HBT doublers with transformer balun

J. Zhang ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IET Seminar Digest. Active RF Devices, Circuits and Systems Seminar, 12 September 2011 Vol. 2011 (2011), 6, p. 29-32.
[Konferensbidrag, refereegranskat]

Broadband monolithic InGaP HBT frequency doublers for K-Band application have been developed. The designs employ a Gm-boosted differential common-base configuration using either capacitive or transformer-based coupling between base and emitters. The design with cross-coupled capacitors presents a fundamental rejection better than 20 dB over a 100% 3dB bandwidth, extending from 6-18 GHz. The transformer-coupled design has about 15dB fundamental rejection over a slightly narrower bandwidth extending from 7-16 GHz. Both doublers have conversion gain peaking at more than -0.8dB and output power more than 13 dBm.

Nyckelord: Capacitor-crossed coupling, Frequency Doubler, InGaP HBT, Transformer balun

Denna post skapades 2013-03-28. Senast ändrad 2017-03-21.
CPL Pubid: 175143


Läs direkt!

Länk till annan sajt (kan kräva inloggning)

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur