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2-D enhanced hammerstein behavior model for concurrent dual-band power amplifiers

J. Moon ; Paul Saad (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; J. Son ; Christian Fager (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; B. Kim
European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 42nd European Microwave Conference, EuMC 2012 p. 1249-1252. (2012)
[Konferensbidrag, refereegranskat]

A two-dimensional enhanced Hammerstein (2-D EH) behavior model is proposed for accurate behavioral modeling capability of concurrent dual-band power amplifiers (PAs). The proposed model is based on the two-box modeling technique to alleviate the number of coefficient used in the model. Compared to the two-dimensional memory polynomial (2-D MP) model, the proposed model requires less coefficient, while maintaining the similar modeling performance, because the static nonlinearity and dynamic behavior are separately estimated. The modeling performances of the models are accessed in terms of the normalized mean square error and adjacent channel error power ratio. Moreover, the linearization capabilities of the models are compared by compensating the nonlinearities of the concurrent dual-band PA. In the experiment, the PA is excited by two wideband code division multiple access 1-FA signals at 1.8 GHz and 2.411 GHz. The modeling assessment and linearization performance clearly show that the proposed 2-D EH outperforms the 2-D MP



Denna post skapades 2013-03-20. Senast ändrad 2015-12-17.
CPL Pubid: 174867

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur