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Optical response of Si/Ge superlattices with embedded Ge dots

S. Kalem ; Örjan Arthursson (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet) ; P. Werner
2012 Photonics Global Conference, PGC 2012,Singapore,13-16 December 2012 Article number 6458128, p. 1-4. (2012)
[Konferensbidrag, refereegranskat]

A method was provided for treating the optical response of Si/Ge superlattices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SL which were grown on silicon (Si) wafers having <;111>; crystallographic orientation. The results of the SE analysis between 1.2 eV and 5.2 eV indicate that the SL system can effectively be described using interdiffusion/intermixing model by assuming a multicrystalline Si and Si1-xGex intermixing layers. The optical transitions exhibit Si, Ge and alloying related critical points.

Denna post skapades 2013-03-14. Senast ändrad 2015-02-26.
CPL Pubid: 174676


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet



Chalmers infrastruktur