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True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

Giuseppe Moschetti (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Morteza Abbasi (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Per-Åke Nilsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; A. Hallen ; L. Desplanque ; X. Wallart ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Solid-State Electronics (0038-1101). Vol. 79 (2013), p. 268-273.
[Artikel, refereegranskad vetenskaplig]

In this paper, we report the room-temperature and cryogenic properties of true planar 110 nm InAs/AlSb HEMTs fabricated with Ar-ion isolation technology. Device isolation is generally improved and is in particular increased by four orders of magnitude at 6 K compared to 300 K. This results in improved drain current saturation, lower gate leakage current and 23% higher peak transconductance. The RF performance is significantly improved as well, with 47% higher f(T) (162 GHz) and 72% higher f(max) (155 GHz) at the low drain voltage of 0.1 V, compared to room temperature. The overall performance of the fabricated devices shows the suitability of ion implantation for the device isolation at cryogenic temperature. Furthermore, the excellent stability against oxidation and truly planar structure of these devices demonstrate great potential for highly integrated cryogenic millimeter-wave circuits in InAs/AlSb technology with ultra-low power consumption.

Nyckelord: InAs/AlSb high electron mobility transistor (HEMT), Ion implantation, Cryogenic, Low-power, MMICs, field-effect transistors, alsb/inas hemts, impact ionization, device, isolation, ohmic contacts, low-voltage, inas, heterostructures, conductance, gaas

Denna post skapades 2013-02-22. Senast ändrad 2016-06-27.
CPL Pubid: 173997


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur