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Weak localization scattering lengths in epitaxial, and CVD graphene

A. M. R. Baker ; J. A. Alexander-Webber ; T. Altebaeumer ; Tjbm Janssen ; A. Tzalenchuk ; Samuel Lara-Avila (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Sergey Kubatkin (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; R. Yakimova ; C. T. Lin ; L. J. Li ; R. J. Nicholas
Physical Review B. Condensed Matter and Materials Physics (1098-0121). Vol. 86 (2012), 23,
[Artikel, refereegranskad vetenskaplig]

Weak localization in graphene is studied as a function of carrier density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2) using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths L-phi, L-i, and L-* on carrier density. We find no significant carrier dependence for L-phi, a weak decrease for L-i with increasing carrier density just beyond a large standard error, and a n(-1/4) dependence for L-*. We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity.

Nyckelord: electronic-properties, bilayer graphene

Denna post skapades 2013-02-04. Senast ändrad 2015-10-22.
CPL Pubid: 172893


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik



Chalmers infrastruktur



Denna publikation är ett resultat av följande projekt:

New Electronics Concept: Wafer-Scale Epitaxial Graphene (CONCEPTGRAPHENE) (EC/FP7/257829)