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The rise of graphene in microwave and THz applications

Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Michael Andersson (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Omid Habibpour (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Josip Vukusic (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
The Swedish-Japan workshop on quantum nano-physics and electronics p. 27. (2013)
[Konferensbidrag, övrigt]

Graphene, a single layer of carbon atoms, has extremely high intrinsic carrier mobility and high carrier saturation velocity, which identifies it as a potential material for high-frequency and terahertz electronics. Applications in the THz range have traditionally been limited radio astronomy. On the other hand, ground-based applications in high-speed data communications, spectroscopy and imaging are emerging. For these applications, having silicon compatible technology is a great advantage since it allows the integration of RF and digital circuits as well as antennas/waveguides on a single chip. Since graphene is compatible with silicon, and thanks to unique transport properties, this 2D material system opens up for a complete new platform for advanced THz sensor systems. In this talk, we will present the current status of graphene devices and circuits for microwave applications, including mixers [1-2] operating up to 30 GHz [3] and microwave amplifiers [4].

Nyckelord: Graphene, FETs, subharmonic resistive mixers, heterodyne receivers, microwave mixers


Invited talk at QNANO 2013, January 13-14, Tokyo, Japan.



Denna post skapades 2013-01-17. Senast ändrad 2017-01-27.
CPL Pubid: 171123