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Low-Temperature Direct Wafer Bonding

Anke Sanz-Velasco (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; Cristina Rusu ; Isabelle Ferain ; Cindy Colinge ; Mark Goorsky
Lattice Engineering: Technology and Applications p. 135-187. (2012)
[Kapitel]

The breakthrough of directwafer bondingwas achieved with siliconon-insulator (SOI) allowing for high-power and high-frequency electronics, microelectronics components with low energy consumption. After this, several bonding techniques have been developed (e.g. silicon direct bonding, anodic bonding) and are being developed (e.g. low-temperature plasma-assisted direct bonding) to achieve hybrid components, as III-V semiconductors on silicon-based substrates, monolithic integration of optoelectronic devices with high-speed silicon integrated circuits, three-dimensional stacking of integrated circuits (ICs) or circuits transfer onto a variety of substrates. An overview of more recent activities on several techniques for attaining low-temperature bonding is presented.

Nyckelord: wafer bonding, direct wafer bonding, low temperature direct wafer bonding



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Denna post skapades 2013-01-09. Senast ändrad 2013-01-09.
CPL Pubid: 169826

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Bionanosystem (2007-2015)

Ämnesområden

Energi
Materialvetenskap
Nanovetenskap och nanoteknik
Elektroteknik och elektronik
Materialteknik
Nanoteknik

Chalmers infrastruktur