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Highly integrated E-band direct conversion receiver

Mattias Ferndahl (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Marcus Gavell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Morteza Abbasi (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012 (1550-8781). (2012)
[Konferensbidrag, refereegranskat]

This paper presents a highly integrated 70-98 GHz direct conversion receiver with 3 stage LNA, x6 frequency multiplier with buffer amplifier, and IQ-mixer suitable for Eband radio communication. The LNA, x6 and IQ-mixer are also presented separately. The LNA covers 65 to 95 GHz with 15 dB gain and minimum 5.5 dB noise figure, x6 covers 71 to 91 GHz with 0 to 8 dBm output power and the IQ-mixer an RF frequency from 70 to 95 GHz and IF frequency from DC to 12 GHz with only 8 dB conversion loss and better than 15 dB image reject. The complete receiver circuit shows an RF bandwidth of 70 to 98 GHz, LO bandwidth of 75 to 92 GHz and IF bandwidth from DC to more than 12 GHz. The conversion gain is 3 to 6 dB with a noise figure of 5 to 7 dB, the image rejection 15 dB to as high as 28 dB, and the input 1 dB compression point -12 dBm.

Nyckelord: backhaul, E-band, GaAs, HEMT, wideband

Denna post skapades 2013-01-07. Senast ändrad 2017-03-21.
CPL Pubid: 169401


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur