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Highly linear gallium nitride MMIC LNAs

Olle Axelsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Kristoffer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012 (1550-8781). (2012)
[Konferensbidrag, refereegranskat]

In this paper, two Low Noise Amplifiers designed in Gallium Nitride HEMT MMIC technology are presented. The focus of the designs is to achieve good linearity at low power consumption and acceptable noise figure. The first design achieves an OIP3/PDC of 12 using traditional LNA design techniques. In a second design, the OIP3 is improved by 2 dB, raising OIP3/PDC to 19, among the highest figures reported for GaN LNAs. This is achieved by using both inductive source feedback and drain-gate RC feedback.

Nyckelord: Gallium Nitride, HEMTs, Linearity, Low-noise amplifiers, MMICs

Denna post skapades 2013-01-07. Senast ändrad 2016-03-08.
CPL Pubid: 169395


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur