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Graphene p-n-p junctions controlled by local gates made of naturally oxidized thin aluminium films

Youngwoo Nam ; Niclas Lindvall (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Jie Sun (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Yung Woo Park ; Avgust Yurgens (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Carbon (0008-6223). Vol. 50 (2012), 5, p. 1987–1992.
[Artikel, refereegranskad vetenskaplig]

Graphene structures with both top- and bottom-electrostatic gates are studied. The top gate is made of thin aluminium (Al) film deposited directly onto graphene, with no prior dielectric layer in between. Natural oxidation of Al at the interface with graphene results in an insulating barrier proving useful in making top gates to graphene. For electrically disconnected top gate, graphene resistance as a function of the slowly-varying back-gate voltage shows hysteresis which reveals dielectric properties of the barrier. The estimated barrier thickness is only 2 nm allowing for very sharp profiles of the electric field in graphene devices. By applying voltages to both back- and top gates, effective p–n–p junctions with sharp interfaces can be created.

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Denna post skapades 2012-12-17. Senast ändrad 2015-02-23.
CPL Pubid: 168043


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