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Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices

S. Sharma ; Saroj Prasad Dash (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; H. Saito ; S. Yuasa ; B. J. van Wees ; R. Jansen
Physical Review B (1098-0121). Vol. 86 (2012), 16,
[Artikel, refereegranskad vetenskaplig]

The contribution of the spin accumulation to tunneling anisotropy in Si/Al2O3/ferromagnet devices was investigated. Rotation of the magnetization of the ferromagnet from in-plane to perpendicular to the tunnel interface reveals a tunneling anisotropy that depends on the type of the ferromagnet (Fe or Ni) and on the doping of the Si (n or p type). Analysis shows that different contributions to the anisotropy coexist. Besides the regular tunneling anisotropic magnetoresistance, we identify a contribution due to anisotropy of the tunnel spin polarization of the oxide/ferromagnet interface. This causes the spin accumulation to be anisotropic, i.e., dependent on the absolute orientation of the magnetization of the ferromagnet.

Nyckelord: spintronics, silicon



Denna post skapades 2012-11-19.
CPL Pubid: 166329

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik

Ämnesområden

Fysik

Chalmers infrastruktur