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Potential barrier at the ferroelectric grain boundary due to asymmetric screening of depolarization fields

Y.A. Genenko ; O. Hirsch ; Paul Erhart (Institutionen för teknisk fysik, Material- och ytteori)
Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012, Aveiro;9 July 2012 through 13 July 2012 Article number 6297727,
[Konferensbidrag, refereegranskat]

Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.



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Denna post skapades 2012-11-15. Senast ändrad 2014-09-02.
CPL Pubid: 166108

 

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