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Decade bandwidth high efficiency GaN HEMT power amplifier designed with resistive harmonic loading

Christer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; J. Moon ; Christian Fager (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; B. Kim ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
2012 IEEE MTT-S International Microwave Symposium, IMS 2012, Montreal, 17-22 June 2012 (0149-645X). (2012)
[Konferensbidrag, refereegranskat]

The use of resistive loading at higher harmonics in wideband power amplifier design is proposed. Although the theoretical efficiency of such operation is lower than other classes the significantly simplified load network design potentially allows for multi-octave realizations. A decade bandwidth (0.4-4.1 GHz) GaN HEMT power amplifier was thereby designed, delivering more than 40 dBm output power with 10-15 dB gain and 40-62% drain efficiency. Linearized modulated signal amplification was then successfully demonstrated at multiple frequencies (0.9 to 3.5 GHz), using various downlink signals (LTE, WCDMA, WiMAX), with resulting ACLR lower than 46 dBc.

Nyckelord: Broadband amplifiers, Gallium nitride, Power amplifiers, Wideband



Denna post skapades 2012-10-12.
CPL Pubid: 164655

 

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