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A method to lower VCO phase noise by using HBT darlington pair

Sz-Hau Lai (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; M. Bao ; Dan Kuylenstierna (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum)
2012 IEEE MTT-S International Microwave Symposium, IMS 2012, Montreal, 17-22 June 2012 (0149-645X). (2012)
[Konferensbidrag, refereegranskat]

The paper presents a novel method to enhance tank voltage swing in LC VCOs design using bipolar transistor. The method is successfully demonstrated in an InGaP/GaAs HBT MMIC process. A gm-boosted VCO and a modified version, using Darlington-pair transistors, are compared. The latter exhibits lower phase noise, increased tuning range, and less variation in output power. The gm-boosted VCO has tuning range of 22.8% centered at 5.7GHz and phase noise ranging from 103 to 95 dBc/Hz at offset frequency of 100kHz. The modified version using Darlington pair has tuning range of 26% centered at 5.9 GHz and phase noise ranging from 103.5 to 98.5 dBc/Hz at offset frequency of 100kHz.

Nyckelord: Darlington pair, HBT, MMIC, Phase-noise, VCO



Denna post skapades 2012-10-12. Senast ändrad 2014-09-17.
CPL Pubid: 164649

 

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