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Highly linear 1-3 GHz GaN HEMT low-noise amplifier

Pirooz Chehrenegar (GigaHertz Centrum ; Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Morteza Abbasi (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Jan Grahn (GigaHertz Centrum ; Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Kristoffer Andersson (GigaHertz Centrum ; Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
2012 IEEE MTT-S International Microwave Symposium, IMS 2012, Montreal, 17-22 June 2012 (0149-645X). (2012)
[Konferensbidrag, refereegranskat]

A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron mobility transistor (HEMT) technology is presented. The amplifier can be operated at three frequency bands of 1, 2 and 3 GHz. The maximum measured gain is 31 dB at 1GHz and the output referred third-order intercept point (OIP3) is constant for all three frequency bands and equal to 41±1 dBm at a power consumption of L.2 W. A minimum noise figure (NF) of 0.5 dB is measured for the amplifier at the same bias point demonstrating the simultaneous linearity and low noise performance. The presented performance together with the reasonably low power consumption is outstanding in comparison with recently published amplifiers in GaN technology and available commercial GaAs LNAs.

Nyckelord: GaN, HEMT, High dynamic range, Linearity, Low Power consumption, Low-noise amplifier



Denna post skapades 2012-10-11.
CPL Pubid: 164636

 

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