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A W-and G-band MMIC source using InP HBT technology

Rumen Kozhuharov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; M. Bao ; Marcus Gavell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
2012 IEEE MTT-S International Microwave Symposium, IMS 2012, Montreal, 17-22 June 2012 (0149-645X).
[Konferensbidrag, refereegranskat]

A frequency doubler/quadrupler for W-and G-band application is designed and fabricated utilizing an InP 250nm heterojunction bipolar transistor process. The multiplier is integrated with balanced V-band VCO. The VCO can be tuned between 57 to 61 GHz with average output power of 6 dBm and phase noise lower than 95 dBc/Hz at 1 MHz offset frequency. The circuit VCO plus multiplier can be used as a source with output power of 2dBm in 113-118 GHz bandwidth and 4dBm from 212 to 228 GHz.

Nyckelord: Differential doubler, Heterojunction bipolar transistor, Voltage controlled oscillator



Denna post skapades 2012-10-11.
CPL Pubid: 164635

 

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