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Modeling of Sb-Heterostructure Backward Diode for Millimeter- and Submillimeter- Wave Detection

Parisa Yadranjee Aghdam (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Huan Zhao (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
39th International Symposium on Compound Semiconductors (2012)
[Konferensbidrag, refereegranskat]

We present modeling of Sb-heterostructure backward tunneling diode (Sb-HBD) for high efficient millimeter- and submillimeter wave detection. The diode epitaxy is modeled and optimized using TCAD software implementing a non-local band-to-band tunneling model combining with the standard drift-diffusion model. The physical device model was found to be in good agreement with reported experimental results. InAsSb/AlSb/AlGaSb structures were proposed and simulated considering the material growth. The potential of the Sb-HBDs for high frequency operation applications is investigated.

Nyckelord: millimeter and submillimeter wave, detector, semiconductor device modeling, heterostructure backward tunneling diode


Compound Semiconductor Week 2012, University of California, Santa Barbara, USA. August 27-30, 2012.



Denna post skapades 2012-08-29. Senast ändrad 2014-11-27.
CPL Pubid: 162706