CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

On the nature of the interfacial layer in ultra-thin TiN/LaluO3 gate stacks

I. Z. Mitrovic ; S. Hall ; N. Sedghi ; G. Simutis ; V. R. Dhanak ; P. Bailey ; T. Q. C. Noakes ; I. Alexandrou ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; J. M. J. Lopes ; J. Schubert
Journal of Applied Physics (0021-8979). Vol. 112 (2012), 4, p. 044102.
[Artikel, refereegranskad vetenskaplig]

We present a detailed investigation on the nature of the interfacial layer (IL) in ultra-thin TiN/LaLuO3 (LLO) gate stacks, which is of importance to facilitate CMOS scaling. The molecular beam deposited LaLuO3 films are found to be amorphous by high-resolution transmission electron microscopy. A similar to 9 angstrom thick LaLuO3/interlayer transition observed by medium energy ion scattering correlates with the presence of a dual silicate/SiO2-like interfacial layer derived from the analysis of photoelectron line positions and electron energy loss spectra. A theoretical model is used for the dielectric transition in a bi-layer LaLuO3/IL structure, linking physical and electrical characterization data. The obtained leakage current of 10(-3) A/cm(2) at 1.5 V and equivalent oxide thickness of 0.75 nm for TiN/LaLuO3 gate stacks are adequate for scaling in the 14-12 nm node.

Nyckelord: DEPOSITION, OXIDES, DIELECTRICS, FILMS, INTEGRATION, MOSFETS



Denna post skapades 2012-08-25. Senast ändrad 2015-07-01.
CPL Pubid: 162581

 

Läs direkt!

Lokal fulltext (fritt tillgänglig)

Länk till annan sajt (kan kräva inloggning)