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Silicon spintronics with ferromagnetic tunnel devices

R. Jansen ; Saroj Prasad Dash (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; S. Sharma ; B. C. Min
Semiconductor Science and Technology (0268-1242). Vol. 27 (2012), 8,
[Artikel, refereegranskad vetenskaplig]

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology.

Nyckelord: electrical spin-injection, metal/tunnel barrier contact, semiconductor, spintronics, fm/si/fm junction, room-temperature, doped silicon, transistor, conduction, resonance, metal



Denna post skapades 2012-08-23.
CPL Pubid: 162501

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik

Ämnesområden

Fysik

Chalmers infrastruktur