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Fabrication and Characterisation of Heterostructure Barrier Varactor Diodes

Jan Stake (Institutionen för mikrovågsteknik) ; Lars Dillner (Institutionen för mikrovågsteknik) ; Mattias Ingvarson (Institutionen för mikroelektronik)
Göteborg, Sweden : Chalmers University of Technology, 1996.

This report deals with fabrication and characterisation of Heterostructure Barrier Varactor (HBV) diodes for frequency multiplier applications. The process steps involved are clean-ing, device isolation, passivation, ohmic contacts, thick metal, air-bridge formation, transfer of EPI-layers to copper substrate, and formation of mechanical support for the whisker. These fabrication steps are described in detail. The characterisation techniques of HBVs are described in detail. An equivalent circuit is extracted from on-wafer S-parameter measurements (0,045-50 GHz). In combination with DC-measurements (ohmic contact resistance, I-V characteristic) a large-signal model for frequencies up to the submillimetre wavelength can be extracted. Furthermore, the relative error in extracted varactor parameters from high frequency S-parameter measurements is presented. The results of lattice matched and pseudomorphic GaAs/AlGaAs, InGaAs/InAlAs, InAs/AlSb and phosphide containing materials for HBVs are presented. The best material for millimetre and submillimetre wave HBVs, among those tested, is the In0,53Ga0,47As/In0,52Al0,48As system with a thin AlAs layer (30 Å) in the middle of the barrier.

Nyckelord: Heterostructure Barrier Varactor (HBV), monolithic microwave integrated circuit (MMIC), millimetre- and submillimetre wave power source, varactor diode, frequency multiplier, III-V semiconductor.

Denna post skapades 2006-09-19. Senast ändrad 2014-09-02.
CPL Pubid: 16216


Institutioner (Chalmers)

Institutionen för mikrovågsteknik (1900-2003)
Institutionen för mikroelektronik (1995-2003)


Materialfysik med ytfysik

Chalmers infrastruktur

Relaterade publikationer

Denna publikation ingår i:

Planar Heterostructure Barrier Varactor Diodes for Millimetre Wave Applications

Heterostructure Barrier Varactors for High Efficiency Frequency Multipliers

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Report - Department of Microwave Technology, Chalmers University of Technology, Göteborg, Sweden 29