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Intersubband energies in Al1-yInyN/Ga1-xInxN heterostructures with lattice constant close to aGaN

H. Akabli ; A. Almaggoussi ; A. Abounadi ; A. Rajira ; Kristian Berland (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; Thorvald Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Superlattices and Microstructures (0749-6036). Vol. 52 (2012), 1, p. 70-77.
[Artikel, refereegranskad vetenskaplig]

We have studied the conduction band profile and the intersubband transition energy, E-12, of Al1-yInyN/Ga1-xInxN quantum well structures. We have considered how material parameters such as non-parabolicity and the uncertainty in the bowing parameter affect E-12 and the corresponding wavelength, lambda(12). The calculations include strain and cover the transition range from telecommunication wavelengths (1.55 mu m) to the mid-infrared (similar to 10 mu m). Our results show that the transition energies of strain-free Al1-yInyN/Ga1-xInxN quantum well structures, which are lattice-matched to GaN (y = 17.7%, x = 0), resulted in wavelengths above similar to 2 mu m. To reach shorter wavelengths, we explored structures with other indium concentrations but maintaining a small mismatch to GaN. For similar to 1% lattice mismatch the wavelength lambda(12) could be reduced to less than 1.55 mu m. The results serve as a starting point for designing and epitaxial growth of photonic intersubband structures.

Nyckelord: GaN, AlN, Intersubband, AlInN, GaInN, Telecommunication wavelength, Strain, multiple-quantum wells, molecular-beam epitaxy, mu-m, laser-diodes, wurtzite semiconductors, absorption, growth, polarization, wavelengths, devices

Denna post skapades 2012-08-15. Senast ändrad 2017-10-03.
CPL Pubid: 161686


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Bionanosystem (2007-2015)
Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



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