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Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

B. G. Vasallo ; Helena Rodilla (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; T. Gonzalez ; Giuseppe Moschetti (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; J. Mateos
Semiconductor Science and Technology (0268-1242). Vol. 27 (2012), 6, p. Article Number: 065018.
[Artikel, refereegranskad vetenskaplig]

The kink effect can spoil the otherwise excellent low noise performance of InAs/AlSb high electron mobility transistors. It has its origin in the pile-up of holes (generated by impact ionization) taking place mainly at the drain side of the buffer, which leads to a reduction of the gate-induced channel depletion and results in a drain current enhancement. Our results indicate that the generation of holes by impact ionization and their further recombination lead to fluctuations in the charge of the hole pile-up, which provoke an important increase in the drain current noise, even when the kink effect is hardly perceptible in the output characteristics.

Nyckelord: monte-carlo, hemts, alsb/inas



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Denna post skapades 2012-07-05. Senast ändrad 2015-02-11.
CPL Pubid: 160115

 

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