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Small epitaxial graphene devices for magnetosensing applications

V. Panchal ; Karin Cedergren (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; R. Yakimova ; A. Tzalenchuk ; Sergey Kubatkin (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; O. Kazakova
Journal of Applied Physics (/ PROCEEDINGS OF THE 56TH ANNUAL CONFERENCE ON MAGNETISM AND MAGNETIC MATERIALS) (0021-8979). Vol. 111 (2012), 7,
[Artikel, refereegranskad vetenskaplig]

Hall sensors with the width range from 0.5 to 20.0 mu m have been fabricated out of a monolayer graphene epitaxially grown on SiC. The sensors have been studied at room temperature using transport and noise spectrum measurements. The minimum detectable field of a typical 10-mu m graphene sensor is approximate to 2.5 mu T/root Hz, making them comparable with state of the art semiconductor devices of the same size and carrier concentration and superior to devices made of CVD graphene. Relatively high resistance significantly restricts performance of the smallest 500-nm devices. Carrier mobility is strongly size dependent, signifying importance of both intrinsic and extrinsic factors in the optimization of the device performance

Nyckelord: microscopy, sensors



Denna post skapades 2012-07-03. Senast ändrad 2015-07-02.
CPL Pubid: 159972

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik

Ämnesområden

Nanoteknik

Chalmers infrastruktur