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Precision comparison of the quantum Hall effect in graphene and gallium arsenide

T.J.B.M. Janssen ; J. M. Williams ; N. E. Fletcher ; R. Goebel ; A. Tzalenchuk ; R. Yakimova ; Samuel Lara-Avila (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Sergey Kubatkin (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; V. I. Fal'ko
Metrologia (0026-1394). Vol. 49 (2012), 3, p. 294-306.
[Artikel, refereegranskad vetenskaplig]

The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well-known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantized resistance values within the relative standard uncertainty of our measurement of 8.7 x 10(-11). The result places new tighter limits on any possible correction terms to the simple relation R-K = h/e(2), and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterization of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget.

SAVE EXAMPLE/MK UK NMS; Swedish Research Council; Foundation for Strategic Research; EU; EPSRC[EP/G041954]; Science and Innovation Award[EP/G014787]; SINGLE The authors are grateful to Dale Henderson, Stephen Giblin and Pravin Patel for their valuable contributions during this work. This work was supported by the UK NMS Pathfinder Programme, Swedish Research Council and Foundation for Strategic Research, EU FP7 STREPs ConceptGraphene and SINGLE, EPSRC grant EP/G041954 and the Science and Innovation Award EP/G014787.

Denna post skapades 2012-06-15. Senast ändrad 2015-10-22.
CPL Pubid: 159049


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Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik



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Denna publikation är ett resultat av följande projekt:

New Electronics Concept: Wafer-Scale Epitaxial Graphene (CONCEPTGRAPHENE) (EC/FP7/257829)