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Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates

Jie Sun (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Niclas Lindvall (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; M.T. Cole ; K.B.K. Teo ; Avgust Yurgens (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. NEMS 2012, Kyoto, 5 - 8 March 2012 p. 11-14. (2012)
[Konferensbidrag, refereegranskat]

Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ∼1000°C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ∼10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics.

Nyckelord: chemical vapor deposition, Graphene, insulator, nanoelectronics



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Denna post skapades 2012-06-12. Senast ändrad 2016-06-29.
CPL Pubid: 158855

 

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