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A 14 Gbps On-/Off- Keying Modulator in GaAs HBT Technology

Zhongxia Simon He (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Thomas Swahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Yinggang Li ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Ieee Microwave and Wireless Components Letters (1531-1309). Vol. 22 (2012), 5, p. 272-274.
[Artikel, refereegranskad vetenskaplig]

A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial heterojunction bipolar transistors IC process. The modulator circuit consists of an amplifier/latch structure, which is used as an OOK modulator for the first time. One of its advantages is that the topology may be implemented in both field effect transistor and bipolar technology. The measurement results correspond well with simulation and show that the modulator is capable of handling carrier frequencies up to 28 GHz, and data rates up to 14 Gbps. The isolation of the modulator in the off-state is better than 27 dB over the whole frequency range.

Nyckelord: Emitter-coupled pair, GaAs heterojunction bipolar transistor (HBT), latch, MMIC, on-/off- keying

Denna post skapades 2012-06-11. Senast ändrad 2017-03-21.
CPL Pubid: 158734


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur

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