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Organic Thin-Film Transistors with Anodized Gate Dielectric Patterned by Self-Aligned Embossing on Flexible Substrates

Yiheng Qin (Institutionen för mikroteknologi och nanovetenskap) ; D. H. Turkenburg ; I. Barbu ; W. T. T. Smaal ; K. Myny ; W. Y. Lin ; G. H. Gelinck ; P. Heremans ; Johan Liu (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; E. R. Meinders
Advanced Functional Materials (1616-301X). Vol. 22 (2012), 6, p. 1209-1214.
[Artikel, refereegranskad vetenskaplig]

An upscalable, self-aligned patterning technique for manufacturing high- performance, flexible organic thin-film transistors is presented. The structures are self-aligned using a single-step, multi-level hot embossing process. In combination with defect-free anodized aluminum oxide as a gate dielectric, transistors on foil with channel lengths down to 5 mu m are realized with high reproducibility. Resulting on-off ratios of 4 x 106 and mobilities as high as 0.5 cm2 V-1 s-1 are achieved, indicating a stable process with potential to large-area production with even much smaller structures.

Nyckelord: organic electronics, thin-film transistors, self-alignment, aluminum, anodization, field-effect transistors, nanoimprint lithography, pentacene, transistors, electronics, fabrication, transport, insulator, displays, performance, arrays

Denna post skapades 2012-05-11.
CPL Pubid: 157534


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap
Institutionen för mikroteknologi och nanovetenskap, Bionanosystem (2007-2015)



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