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Planar InAs/AlSb HEMTs With Ion-Implanted Isolation

Giuseppe Moschetti (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Per-Åke Nilsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; A. Hallen ; L. Desplanque ; X. Wallart ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE Electron Device Letters (0741-3106). Vol. 33 (2012), 4, p. 510-512.
[Artikel, refereegranskad vetenskaplig]

The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors (HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been implanted at an energy of 100 keV and with a dose of 2 x 10(15) cm(-2) in order to induce device isolation. The InAs/AlSb HEMT exhibited a maximum drain current of 900 mA/mm, a peak transconductance of 1180 mS/mm, and an f(T)/f(max) ratio of 210 GHz/180 GHz at a low drain bias of 0.3 V. The combination of excellent stability against oxidation with the high device isolation demonstrated by the implantation technique can dramatically improve the suitability of InAs/AlSb HEMTs for high-frequency and ultralow-power MMIC applications.

Nyckelord: InAs/AlSb high-electron-mobility transistor, ion implantation, low, power, MMIC, field-effect transistors

Denna post skapades 2012-05-09.
CPL Pubid: 157473


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur