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Electro-Thermal Model for Multi-Anode Schottky Diode Multipliers

Aik Yean Tang (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Erich Schlecht ; Robert Lin ; Goutam Chattopadhyay ; Choonsup Lee ; John Gill ; Imran Mehdi ; Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
IEEE Transactions on Terahertz Science and Technology (2156-342X). Vol. 2 (2012), 3, p. 290-298.
[Artikel, refereegranskad vetenskaplig]

We present a self-consistent electro-thermal model for multi-anode Schottky diode multiplier circuits. The thermal model is developed for an -anode multiplier via a thermal resistance matrix approach. The nonlinear temperature responses of the material are taken into consideration by using a linear temperature dependent approximation for the thermal resistance. The electrothermal model is capable of predicting the hot spot temperature, providing useful information for circuit reliability study as well as high power circuit design and optimization. Examples of the circuit analysis incorporating the electro-thermal model for a substrateless- and a membrane-based multiplier circuits, operating up to 200 GHz, are demonstrated. Compared to simulations without thermal model, the simulations with electro-thermal model agree better with the measurement results. For the substrateless multiplier, the error between the simulated and measured peak output power is reduced from ~13% to ~4% by including the thermal effect.

Nyckelord: Electro-thermal model, gallium arsenide (GaAs), high power submillimeter-wave generation, self-heating, thermal analysis, frequency multiplier, Schottky diodes

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Denna post skapades 2012-04-19. Senast ändrad 2014-09-02.
CPL Pubid: 156819


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