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Combined TiN- and TaN temperature compensated thin film resistors

Anna Malmros (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Kristoffer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Thin Solid Films (0040-6090). Vol. 520 (2012), 6, p. 2162-2165.
[Artikel, refereegranskad vetenskaplig]

The opposite signs of the temperature coefficient of resistance (TCR) of two thin film materials, titanium nitride (TiN) and tantalum nitride (TaN), were used to form temperature compensated thin film resistors (TFRs). The principle of designing temperature compensated TFRs by connecting TFRs of each compound in series or in parallel was demonstrated. TiN, TaN, and combined TiN and TaN TFRs for monolithic microwave integrated circuits (MMICs) were fabricated by reactive sputtering. DC characterization was performed over the temperature range of 30-200 degrees C. The TiN TFRs exhibited an increase in resistivity with temperature with TCRs of 540 and 750 ppm/degrees C. The TaN TFR on the other hand exhibited a negative TCR of -470 ppm/degrees C. The shunted TFRs were fabricated by serial deposition of TiN and TaN to form a bilayer component. The TCRs of the series- and shunt configurations were experimentally reduced to -60 and 100 ppm/degrees C, respectively. The concept of temperature compensation was used to build a Wheatstone bridge with an application in on-chip temperature sensing.

Nyckelord: Thin Film Resistor, Titanium Nitride, Tantalum nitride, Temperature, Coefficient of Resistance, Wheatstone bridge, microwave integrated-circuits, mmic process, fabrication, resistance, nitride, sensor

Denna post skapades 2012-04-10. Senast ändrad 2015-07-28.
CPL Pubid: 156491


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur