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Size dependent biexciton binding energies in GaN quantum dots

S. Amloy ; K. H. Yu ; K. F. Karlsson ; Rashid Farivar (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Thorvald Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; P. O. Holtz
Applied Physics Letters (0003-6951). Vol. 99 (2011), 25,
[Artikel, refereegranskad vetenskaplig]

Single GaN/Al(Ga)N quantum dots (QDs) have been investigated by means of microphotoluminescence. Emission spectra related to excitons and biexcitons have been identified by excitation power dependence and polarization resolved spectroscopy. All investigated dots exhibit a strong degree of linear polarization (similar to 90%). The biexciton binding energy scales with the dot size. However, both positive and negative binding energies are found for the studied QDs. These results imply that careful size control of III-Nitride QDs would enable the emission of correlated photons with identical frequencies from the cascade recombination of the biexciton, with potential applications in the area of quantum information processing.

Nyckelord: exciton

Denna post skapades 2012-02-17. Senast ändrad 2015-07-08.
CPL Pubid: 155191


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



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