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Improved Diode Geometry for Planar Heterostructure Barrier Varactors

Jan Stake (Institutionen för mikroelektronik) ; Chris M. Mann ; Lars Dillner (Institutionen för mikroelektronik) ; Stephen H. Jones ; Stein Hollung (Institutionen för mikroelektronik) ; Mattias Ingvarson (Institutionen för mikroelektronik) ; Henini Mohamed ; Byron Alderman ; Erik L. Kollberg (Institutionen för mikroelektronik)
Tenth International Symposium on Space Terahertz Technology p. 485-491. (1999)
[Konferensbidrag, refereegranskat]

We report state-of-the-art performance of tripler efficiency and output power for a new design of AlGaAs-based heterostructure barrier varactor diodes. The new diodes were designed for reduced thermal resistance and series resistance. An efficiency of 4.8% and a maximum output power of 4 mW was achieved at an output frequency of 246 GHz.

Nyckelord: HBV, frequency multiplier


ISSTT 1999



Denna post skapades 2006-08-28. Senast ändrad 2014-09-02.
CPL Pubid: 15498

 

Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)

Ämnesområden

Elektronik

Chalmers infrastruktur

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