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Heterostructure Barrier Varactor Multipliers

Lars Dillner (Institutionen för mikroelektronik) ; Mattias Ingvarson (Institutionen för mikroelektronik) ; Erik L. Kollberg (Institutionen för mikroelektronik) ; Jan Stake (Institutionen för mikroelektronik)
GAAS 2000 Vol. 1 (2000), p. 197-200.
[Konferensbidrag, refereegranskat]

The Heterostructure Barrier Varactor (HBV) diode and its application in frequency multipliers is reviewed. Different material systems and HBV models are described. Multiplier performance versus diode parameters and some practical multiplier designs are discussed as well. The best result until now is an efficiency of 12% and an output power of 9 mW at an output frequency of 250 GHz.

Nyckelord: varactors, HBV


Invited paper.



Denna post skapades 2006-08-28. Senast ändrad 2014-09-02.
CPL Pubid: 15449

 

Institutioner (Chalmers)

Institutionen för mikroelektronik (1995-2003)

Ämnesområden

Elektronik

Chalmers infrastruktur