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Carrier conduction through the quantum barrier in a heterostructure barrier varactor Induced by an AC-Bias

Ying Fu (forskargrupp för fysikalisk elektronik och fotonik) ; Magnus Willander (forskargrupp för fysikalisk elektronik och fotonik) ; Jan Stake (Institutionen för mikroelektronik) ; Lars Dillner (Institutionen för mikroelektronik) ; Erik L. Kollberg (Institutionen för mikroelektronik)
Superlattices and Microstructures Vol. 28 (2000), 2, p. 135-141.
[Artikel, refereegranskad vetenskaplig]

By solving the time-dependent Schrodinger equation, we have studied the quantum transport of a wavepacket in a GaAs/A1GaAs heterostructure barrier varactor (HBV) diode induced by an ac bias. The current conduction of a wavepacket is complicated due to the superposition of many different stationary states. When the oscillating frequency of the external bias is relatively low, the motion of the wavepacket follows the electric field induced by the external bias. When the frequency is too high (over 1000 GHz for the GaAs/A1GaAs HBV structure under investigation), the wavepacket becomes effectively confined by the oscillating bias, and the conduction current is significantly reduced.

Nyckelord: HBV, frequency multiplier, physical simulation

Denna post skapades 2006-09-28. Senast ändrad 2014-09-02.
CPL Pubid: 15447


Institutioner (Chalmers)

forskargrupp för fysikalisk elektronik och fotonik (1997-2004)
Institutionen för mikroelektronik (1995-2003)



Chalmers infrastruktur