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Growth of GaSb1-xBix by molecular beam epitaxy

Yuxin Song (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Ivy Saha Roy (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Peixiong Shi ; Anders Hallen
Journal of Vacuum Science & Technology B (1071-1023). Vol. 30 (2012), 2, p. Art. no. 02B114.
[Artikel, refereegranskad vetenskaplig]

Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.

Nyckelord: bismuth alloys, gallium alloys, molecular beam epitaxial growth, Rutherford backscattering, secondary ion mass spectra, silicon alloys, X-ray diffraction



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Denna post skapades 2012-01-18. Senast ändrad 2015-01-30.
CPL Pubid: 153678

 

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