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Epitaxial and Layout Optimization of SiC Microwave Power Varactors

Christer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Björn Magnusson ; Niklas Henelius ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Asia-Pacific Microwave Conference Proceedings, APMC (APMC 2011 ;Melbourne, VIC; 5 - 8 December 2011) p. 1642-1645. (2011)
[Konferensbidrag, refereegranskat]

SiC Schottky diode varactors have been designed for use in tunable microwave power circuits. Epitaxial growth results show excellent material uniformity with low access layer sheet resistances. Two types of device layouts have been evaluated. Island type layouts reduce the parasitic series resistance by 50-60% compared to typical finger layouts. The Q-factors of downscaled island devices are approaching the intrinsic material performance, but are limited by an increasing parasitic parallel capacitance.

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Denna post skapades 2012-01-14. Senast ändrad 2015-07-28.
CPL Pubid: 152899