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A Large Signal Graphene FET Model

Omid Habibpour (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Josip Vukusic (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
IEEE Transactions on Electron Devices (0018-9383). Vol. 59 (2012), 5, p. 1567-1567.
[Artikel, refereegranskad vetenskaplig]

We propose a semiempirical graphene field effect transistor (G-FET) model for analysis and design of G-FET based circuits. The model describes the current-voltage characteristic for a G-FET over a wide range of operating conditions. The gate bias dependence of the output power spectrum is studied and compared with simulated values. A good agreement between the simulated and the experimental power spectrum up to the 3rd harmonic is demonstrated which confirms the model validity. Moreover, S-parameter measurements essentially coincide with the results obtained from the simulation. The model contains a small set of fitting parameters which can straightforwardly be extracted from S-parameters and DC measurements. The developed extraction method gives a more accurate estimation of the drain and source contact resistances compared to other approaches. As a design example, we use a harmonic-balance load-pull approach to extract optimum embedding impedances for a subharmonic G-FET mixer.

Nyckelord: Graphene, Microwave FETs, semiconductor device modeling, subharmonic mixer, harmonic balance analysis

Org. publ. with DOI: 10.1109/TED.2012.2182675

Denna post skapades 2012-01-01. Senast ändrad 2017-01-27.
CPL Pubid: 151329


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